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Micro and Nano Electron Devices

  • Class 45
  • Practice 19
  • Independent work 86
Total 150

Course title

Micro and Nano Electron Devices

Lecture type

Elective

Course code

183441

Semester

5

ECTS

5

Lecturers and associates

Course objectives

Energy band diagram.
Capacitance-voltage characteristics.
Oxide charges; Body effect.
Charged Coupled Devices (CCD); Image sensor technologies.
CMOS Active Pixel Sensors (APS).
Data read-out and system integration.
Velocity saturation; Threshold voltage.
Midterm exam.
Drain Induced Barrier Lowering (DIBL); Punchthrough.
Moore's law; Scaling rules.
Electrostatic limitations; Physical limitations.
Advanced CMOS devices (FinFET, Ultra-thin body Double-gate).
High-k, metal gate; Carrier transport.
Advanced materials (III-V CMOS, nano-tubes, graphene, Ge).
Final exam.

Required reading

(.), Y. Taur, T. Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press,
(.), S. Dimitrijev, Understanding Semiconductor Device, Oxford Press,
(.), P. Biljanović. Poluvodički elektronički elementi. Školska knjiga,
(.), S. Sze, K. K. Ng, Physics of Semiconductor Devices, John Wiley and Sons,

Minimal learning outcomes

  • Define the rules of semiconductor technology development
  • Explain the physical principles of advanced transistors
  • Explain the scaling of MOS structures
  • Analyze short channel effects
  • Identify the limitations of advanced transistors
  • Explain the effect of technological parameters on electrical characteristics of electron devices
  • Compare the advanced materials for future transistors
  • Analyze semiconductor image sensors and acquisition systems
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